China's progress in research on new optoelectronic/synaptic thin film transistors
[ Instrument Network Instrument Development ] Thin-Film Transistors (TFTs) are the most basic and important three-terminal electronic components in the semiconductor industry. They have been widely used in consumer products such as flat panel displays and RF tags. In recent years, TFTs have gradually attracted people's attention in the fields of photodetection and photoreceptor synapses. Compared with the traditional two-terminal devices, photoelectric TFTs have the following outstanding advantages: the use of TFTs' gate voltage control degrees of freedom can realize the integration of signal detection and amplification, which is beneficial to the simplification of later circuit design and reduce system power consumption; photodetection TFTs and Traditional electrical functions (switching, driving, location, etc.) TFTs have the same structure and process compatibility, easy to integrate (even pixelated integration), and help to improve the flexibility of system design. 
Ultraviolet photodetectors have important applications in the fields of national defense, power grid security monitoring, medical imaging, maritime search and rescue, environmental and biochemical testing, forest fire alarms, etc., and are the focus of research and development in the world. In recent years, Cao Hongtao's research team of Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, realized the coupling of two-terminal and three-terminal devices by modifying the p-type PEDOT:PSS film on the back channel surface of the depletion-type SnOx/IGZO thin film transistor. High performance visible blind UV photodetection TFTs. The photoelectric response and photosensitivity of the device have been significantly improved by taking advantage of both ends (built-in electric field in the vertical direction, separating charge) and three-terminal devices (lateral source leakage electric field, collecting charge). The above results are published in ACS Appl. Mater. Interfaces 2018, 10, 8102-8109.
In addition, "artificial intelligence (AI)" has become one of the global research hotspots, and synapses are one of the important basic tools for building artificial neural networks based on the device level. Based on the work of the coupled devices in the previous study, the team constructed a highly sensitive, low-power optoelectronic device that simulates visual synapses. The device operates in the visible and ultraviolet regions, has long-range, short-range plasticity, and has selective memory and Forgotten features. It is responsive to blue light pulses with signal strength as low as 1μW/cm2. The electrical power consumption of a single device is less than 10pW, and optical writing and electrical erasing functions can be realized. The idea of ​​using a high-k gate dielectric to further reduce the operating voltage, the team also constructed a fully transparent visible light response photoreceptor synapse device that responds to low light and consumes less energy. The above results are published in Nano Energy 2019, 62, 772-780.
The above work was funded by the National Natural Science Foundation of China, the Chinese Academy of Sciences International Cooperation Key Project, the Ningbo Science and Technology Innovation Team, and the Ningbo Natural Science Foundation.
(Original title: Progress in research on new optoelectronic/synaptic thin film transistors in Ningbo Materials)
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